onsemi FDMS8460

Name: onsemi FDMS8460
Brand: onsemi
SKU: FDMS8460

N-Channel Power Trench® MOSFET 40V, 49A, 2.2mΩ

$ 0.717

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	FDMS8460	3,000	3K						0.632	16h
Newark	2	FDMS8460	2,899	5	Cut Tape		1.600	1.170	0.921	0.921
Arrow Electronics	2	FDMS8460	276	1		0.933	0.819	0.710	0.651	0.651
Verical	2	FDMS8460	276	10			0.819	0.710	0.651	0.651
DigiKey	3	488-FDMS8460CT-ND	14,139	1	Cut Tape	2.350	1.503	1.020	0.747	0.747

数据表和文档

下载 onsemi FDMS8460 的数据表和制造商文档。

Upverter

Technical Drawing1 页4 年前

Datasheet7 页5 年前

Newark

IHS

Master Electronics

onsemi

库存历史记录

3 个月趋势:

+2.88%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-02-14

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDMS8460 的描述。

N-Channel Power Trench® MOSFET 40V, 49A, 2.2mΩ

onsemi

Trans MOSFET N-CH Si 40V 25A 8-Pin PQFN EP T/R

Richardson RFPD

FDMS8460 Series 40 V 49 A 2.2 mOhm N-Channel PowerTrench® MOSFET - POWER-56

Future Electronics

XTR,PWR,MFT,FDMS8460,SMT N-CH,40V,49A,H=0.043 MAX RDS(ON)=2.2m,POWER 56 PKG

Sensible Micro

2.5W(Ta),104W(Tc) 20V 3V@ 250¦ÌA 110nC@ 10 V 1N 40V 2.2m¦¸@ 25A,10V 25A,49A 7.205nF@20V PQFN 1.1mm

UnikeyIC

Power Field-Effect Transistor, 25A I(D), 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

TAPE REEL / Nch ,Power Trench MOSFET

Newark

MOSFET,N CH,40V,25A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power D

element14 APAC

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Fairchild Semiconductor