供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-11-20
Lifecycle StatusProduction (Last Updated: 1 day ago)
LTB Date2022-01-07
LTD Date2022-07-07
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 1 day ago)
相关零件
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N-Channel 30 V 23A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
描述
由其分销商提供的 onsemi FDMS6681Z 的描述。
Trans MOSFET P-CH Si 30V 21.1A 8-Pin PQFN EP T/R / MOSFET P-CH 30V 21.1A POWER56
P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ
FDMS6681Z Series -30 V -122 A 3.2 mOhm P-Channel PowerTrench Mosfet - Power-56
P-Ch MOSFET, 2.5W(Ta), 73W(Tc), 25V, 3V@250µA, 241nC@10V, 30V, 3.2mΩ@22.1A,10V, 21.1A, 49A, 10.38nF@15V, PQFN-8/TO-220/TO-220-3/TO-220AB, SMD, 1.1mm H
The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)21.1 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vds)-30 V
Element ConfigurationSingle
Fall Time197 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance10.38 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation73 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max3.2 mΩ
Resistance3.2 MΩ
Rise Time38 ns
Schedule B8541290080
Threshold Voltage-1.7 V
Turn-Off Delay Time260 ns
Turn-On Delay Time15 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明