Infineon BSC030N03LSGATMA1

Name: Infineon BSC030N03LSGATMA1
Brand: Infineon
SKU: BSC030N03LSGATMA1

Power MOSFET, N Channel, 30 V, 100 A, 0.0025 ohm, PG-TDSON, Surface Mount

$ 0.399

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		BSC030N03LSGATMA1	4,148	1		1.380	0.869	0.576	0.409	0.322
Arrow Electronics	2	BSC030N03LSGATMA1	4,975	1		1.261	0.829	0.562	0.443	0.443
Future Electronics	2	BSC030N03LSGATMA1	5,000	5K	Tape & Reel					0.485
Rutronik		TMOSP9582	5,000	5K						0.343	8h
DigiKey	3	BSC030N03LSGATMA1CT-ND	19,542	1	Cut Tape	1.440	0.904	0.598	0.424	0.389

数据表和文档

下载 Infineon BSC030N03LSGATMA1 的数据表和制造商文档。

_legacy Avnet

Datasheet10 页15 年前

Farnell

element14 APAC

iiiC

Newark

库存历史记录

3 个月趋势:

+19.67%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon BSC030N03LSGATMA1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-10-24

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon BSC030N03LSGATMA1 的描述。

Power MOSFET, N Channel, 30 V, 100 A, 0.0025 ohm, PG-TDSON, Surface Mount

EBV Elektronik

MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon