onsemi FDMS3660S

Name: onsemi FDMS3660S
Brand: onsemi
SKU: FDMS3660S

Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/R

$ 0.955

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Distributor		SKU		Min
Avnet	2	FDMS3660S	636,000	3K					0.815	21h
Newark		FDMS3660S	8,373	1	2.910	1.900	1.310	1.050	1.010
Verical	4	FDMS3660S	100	7		0.244	0.236	0.236	0.236
Arrow Electronics	2	FDMS3660S	2,900	1	0.867	0.867	0.867	0.867	0.867
Rochester Electronics	2	FDMS3660S	113,635				1.150	0.955	0.851	19h

数据表和文档

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Upverter

Technical Drawing2 页5 年前

IHS

Master Electronics

Future Electronics

onsemi

库存历史记录

3 个月趋势:

-0.10%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2012-01-13

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDMS3660S 的描述。

Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/R

Avnet Japan

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

onsemi

Dual N-Channel 30 V 8 /1.8 mO 21 / 62 nC PowerTrench Asymmetric Mosfet - Power56

Future Electronics

Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

Semicontronic

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Fairchild Semiconductor

MOSFET, DUAL N CH, 30V, 60A, POWER 56-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell