由其分销商提供的 Vishay SIRA18DP-T1-GE3 的描述。
SIRA18DP-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 15.5 A, 30 V, 8-PIN POWERPAK SO
Power MOSFET, N Channel, 30 V, 33 A, 0.006 ohm, PowerPAK SO, Surface Mount
MOSFET Devices; VISHAY; SIRA18DP-T1-GE3; 30 V; 33 A; 20 V; 3.3 W
Trans MOSFET N-CH 30V 33A 8-Pin PowerPAK SO EP T/R
Power Field-Effect Transistor, 33A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 7.5mOhm@10V 13.3A N-Ch G-IV
Vishay NMOS, Vds=30 V, 33 A, PowerPAK SO-8
N-Ch PowerPAK SO-8 BWL 30V 7.5mohm@10V
FET Input Operational Amplifier
MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited