价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDMC86102L | 403 | 9 | |||||||||
| Arrow Electronics | FDMC86102L | 403 | 1 | |||||||||
| Rochester Electronics | FDMC86102L | 10,140 | 8h | |||||||||
| DigiKey | FDMC86102LFSCT-ND | 375 | 1 | Cut Tape | ||||||||
| Newark | FDMC86102L | 0 | 3K | Tape & Reel |
供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDMC86102L 的描述。
N-Channel Shielded Gate PowerTrench® MOSFET 100V , 18A, 23mΩ
MOSFET, N CH, 100V, 0.0189OHM, 18A, MLP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0189ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight165.33333 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time2.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.33 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.3 W
Rds On Max23 mΩ
Resistance24 MΩ
Rise Time2.2 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7.7 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm