onsemi FDMC2610

Name: onsemi FDMC2610
Brand: onsemi
SKU: FDMC2610

N-Channel Trench® MOSFET, UltraFET, 200V, 9.5A, 200mΩ

$ 1.505

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制造商页面数据表

价格与库存

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Distributor		SKU	Min	Pkg
Newark	2	FDMC2610	3K	Tape & Reel			1.570
Onlinecomponents.com		FDMC2610	25	Bulk	2.370	1.790	1.680
Future Electronics	2	FDMC2610	3K	Tape & Reel			1.770
Master Electronics		FDMC2610	25		2.370	1.790	1.680
Avnet		FDMC2610	3K					4h

数据表和文档

下载 onsemi FDMC2610 的数据表和制造商文档。

Farnell

Datasheet0 页0 年前

Datasheet8 页17 年前

onsemi

IHS

Upverter

Future Electronics

库存历史记录

3 个月趋势:

+27.53%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-10-10

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDMC2610 的描述。

N-Channel Trench® MOSFET, UltraFET, 200V, 9.5A, 200mΩ

onsemi

N-Channel 200 V 200 mOhm Surface Mount UltraFET Trench Mosfet - Power-33-8

Future Electronics

This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.

Fairchild Semiconductor

MOSFET, N CH, 200V, 9.5A, POWER33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:200V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.5A; Package / Case:Power 33; Power Dissipation Pd:42W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:3.2V; Voltage Vgs Rds on Measurement:10V

element14 APAC