供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-10
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)
相关零件
VishaySI4464DY-T1-E3
MOSFET 1.5W(Ta) 20V 4V@250µA 18nC@10V 1N-Ch 200V 240mΩ@2.2A,10V 1.7A SOIC-8 SMD 1.75mm H
描述
由其分销商提供的 onsemi FDMC2610 的描述。
N-Channel Trench® MOSFET, UltraFET, 200V, 9.5A, 200mΩ
N-Channel 200 V 200 mOhm Surface Mount UltraFET Trench Mosfet - Power-33-8
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.
MOSFET, N CH, 200V, 9.5A, POWER33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:200V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.5A; Package / Case:Power 33; Power Dissipation Pd:42W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:3.2V; Voltage Vgs Rds on Measurement:10V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight165.33333 mg
Technical
Continuous Drain Current (ID)2.2 A
Current Rating9.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance397 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance960 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation42 W
Rds On Max200 mΩ
Resistance200 MΩ
Rise Time13 ns
Schedule B8541290080
Turn-Off Delay Time29 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)220 V
Dimensions
Height800 µm
Length3 mm
Width3 mm