Infineon IRF7450PBF

Name: Infineon IRF7450PBF
Brand: Infineon
SKU: IRF7450PBF

Single N-Channel 200 V 170 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7450PBF	0	3800	Bulk					1.430	8h
Farnell	IRF7450PBF	0	5			0.286*	0.286*	0.286*	0.286*	16h
Win Source	WS-IRF7450PBF	25,580	70				0.722	0.482	0.482	17h
Worldway Electronics	IRF7450PBF	18,131	7	Tube		0.088	0.085	0.081	0.081	16h
Aztech	IRF7450PBF	271			11.510	11.510	11.510	11.510	11.510	12h

数据表和文档

下载 Infineon IRF7450PBF 的数据表和制造商文档。

IHS

Datasheet9 页21 年前

Datasheet8 页21 年前

Newark

Future Electronics

iiiC

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF7450PBF 的描述。

Single N-Channel 200 V 170 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

SMPS MOSFET HEXFET Power MOSFET | MOSFET N-CH 200V 2.5A 8-SOIC

Win Source

200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Fall Time tf:17ns; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power Dissipation Pd:2.5W; Power Dissipation Pd:3W; Pulse Current Idm:20A; Rise Time:3ns; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon