价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7450TRPBF | 0 | 4K | Bulk | 20h | |||||||
| Farnell | IRF7450TRPBF | 0 | 1 | Cut Tape | 3h | |||||||
| Win Source | WS-IRF7450TRPBF | 6,149 | 70 | 4h | ||||||||
| Worldway Electronics | IRF7450TRPBF | 19,524 | 7 | Tape & Reel | 1d | |||||||
| ICPartonline | IRF7450TRPBF | 33,447 | 4d |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-01-31
LTD Date2021-07-31
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描述
由其分销商提供的 Infineon IRF7450TRPBF 的描述。
Single N-Channel 200 V 0.17 Ohm 39 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC T/R
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:2.5A; On Resistance, Rds(on):170mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance940 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance170 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max170 mΩ
Resistance170 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time17 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)200 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm