onsemi FDMA1032CZ

Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 ohm

Trans MOSFET N/P-CH 20V 3.7A/3.1A 6-Pin MicroFET EP T/R

Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229

onsemi N/PChannel EnhancedMOSTube PowerTrenchseries, Vds=20 V, 3.1 A，3.7 A, MicroFET 2 x 2encapsulation, surface mount, 6Pin

DC DC Converters 1 (Unlimited) 1 4-SIP Module Through Hole Isolated Module ITE (Commercial) ECONOLINE RO/E (1W) -40°C~100°C 0.45Lx0.24W x 0.39 H 11.5mmx6.0mmx10.0mm DC DC CONVERTER 5V 1W

Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.068ohm; Rds(on) Test Voltage, Vgs:1V; Threshold Voltage, Vgs Typ:12V; Package/Case:6-MicroFET ;RoHS Compliant: Yes

This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications.