onsemi FDMA1032CZ

Name: onsemi FDMA1032CZ
Brand: onsemi
SKU: FDMA1032CZ

Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 ohm

$ 0.29

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	FDMA1032CZ	15,000	3K					0.213	2d
Future Electronics		FDMA1032CZ	6,000	3K	Tape & Reel				0.350
Newark	3	FDMA1032CZ	4	5	Cut Tape	0.625	0.407	0.361	0.361
Rochester Electronics		FDMA1032CZ	1,000				0.262	0.218	0.194	18h
Flip Electronics		FDMA1032CZ	2,558							1d

数据表和文档

下载 onsemi FDMA1032CZ 的数据表和制造商文档。

IHS

Datasheet9 页3 年前

Master Electronics

Farnell

Upverter

element14 APAC

库存历史记录

3 个月趋势:

-63.66%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-05-26

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDMA1032CZ 的描述。

Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 ohm

Avnet Silica

Trans MOSFET N/P-CH 20V 3.7A/3.1A 6-Pin MicroFET EP T/R

Verical

Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229

Semicontronic

Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.068ohm; Rds(on) Test Voltage, Vgs:1V; Threshold Voltage, Vgs Typ:12V; Package/Case:6-MicroFET ;RoHS Compliant: Yes

Newark

This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications.

Fairchild Semiconductor