供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-04
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
相关零件
Diodes Inc.ZXMN2F34FHTA
Power MOSFET, Low Voltage, N Channel, 20 V, 4 A, 0.06 ohm, SOT-23, Surface Mount
描述
由其分销商提供的 onsemi FDFMA2N028Z 的描述。
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
20V,3.7A,68 OHM, NCH POWER TRENCH MOSFET & SCHOTTKY DIODE
Trans MOSFET N-CH 20V 3.7A 6-Pin MicroFET EP T/R
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 20V, 3.7A, UFET-6
20V 3.7A 68 O Nch Er Tre Rohs Compliant: Yes
MOSFET 20V N-Ch PT MFET SCHOTTKY
MOSFET N-CH 20V 3.7A 6MICROFET
MOSFETs 20V N-Ch PT MFET_SCHOTTKY
SMALL SIGNAL FIELD-EFFECT TRANSI
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight60 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating3.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance680 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance455 pF
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.4 W
Rds On Max68 mΩ
Resistance68 MΩ
Rise Time8 ns
Threshold Voltage1 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)20 V
Dimensions
Height750 µm
Length2 mm
Width2 mm