供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-05-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDMA1029PZ 的描述。
PowerTrench® MOSFET, Dual P-Channel, -20V, -3.1A, 95mΩ
Transistor MOSFET Array Dual P-CH 20V 3.1A 6-Pin MicroFET T/R
Avnet Japan
Dual P-Channel 20 V 1.4 W 10 nC PowerTrench Surface Mount Mosfet - MICROFET-2x2
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.1A; On Resistance, Rds(on):0.095ohm; Rds(on) Test Voltage, Vgs:-1V; Threshold Voltage, Vgs Typ:12V ;RoHS Compliant: Yes
This device is designed specifically as a single-package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET™ 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)3.1 A
Current Rating-3.1 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationDual
Fall Time11 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance540 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation700 mW
Rds On Max95 mΩ
Rise Time11 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time37 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-20 V
Dimensions
Height850 µm
Length2 mm
Width2 mm