onsemi FDMA1025P

PowerTrench® MOSFET, Dual P-Channel, -20V, -3.1A, 155mΩ

Transistor MOSFET Array Dual P-CH 20V 3.1A 6-Pin MicroFET T/R

MOSFET, DUAL, P, SMD, MLP; Transistor type:PowerTrench; Voltage, Vds typ:-20V; Current, Id cont:3.1A; Resistance, Rds on:0.155ohm; Voltage, Vgs Rds on measurement:-4.5V; Voltage, Vgs th typ:-0.9V; Case style:MicroFET; Current, Idm RoHS Compliant: Yes

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and well suited to linear mode applications.

MOSFET, DUAL, P, SMD, MLP; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:20V; On State Resistance:155mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:1.4W; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Current Id Max:-3.1A; Package / Case:MicroFET; Termination Type:SMD; Transistor Type:Trench; Pulse Current Idm:6A; SMD Marking:025; Voltage Vds Typ:-20V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V