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描述
由其分销商提供的 onsemi FDFC2P100 的描述。
Trans MOSFET P-CH 20V 3A 6-Pin SuperSOT T/R
MOSFETs -20V Integrate P-Ch PT MOSFET-Schtky Dio
Power Field-Effect Transistor, 3A I(D), 20V, 0.252ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P, FETKY, SSOT-6; Transistor Type:PowerTrench; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:3A; Resistance, Rds On:0.15ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.9V; Case Style:SSOT-6; Termination Type:SMD; Current, Id Max:-6A; Current, If AV:1mA; No. of Pins:6; Power Dissipation:1.5mW; Voltage, Vds Max:20V; Voltage, Vf Max:0.45V; Voltage, Vgs th Max:-1.5V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance252 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time11 ns
Forward Current1 mA
Gate to Source Voltage (Vgs)12 V
Input Capacitance445 pF
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.5 W
Rds On Max150 mΩ
Rise Time11 ns
Threshold Voltage-900 mV
Turn-Off Delay Time12 ns