供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Transistor: 2xN-MOSFET; unipolar; 20V; 5.2A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
描述
由其分销商提供的 onsemi FDMA1024NZ 的描述。
PowerTrench® MOSFET, Dual N-Channel, 20V, 5.0A, 54mΩ
FDMA1024NZ Series 20 V 5.0 A 54 mOhm Dual N-Ch PowerTrench® MOSFET - MicroFET-6
Transistor MOSFET Array Dual N-CH 20V 5A 6-Pin MicroFET T/R
Avnet Japan
Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
MOSFET, NN CH, 20V, MICROFET 2X2; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:700mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time2.2 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance500 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels2
Number of Elements2
Power Dissipation700 mW
Rds On Max54 mΩ
Resistance54 MΩ
Rise Time2.2 ns
Schedule B8541290080
Threshold Voltage700 mV
Turn-Off Delay Time18 ns
Turn-On Delay Time5.3 ns
Dimensions
Height800 µm
Length2 mm
Width2 mm