STMicroelectronics STS6NF20V

Name: STMicroelectronics STS6NF20V
Brand: STMicroelectronics
SKU: STS6NF20V

N-channel 20 V, 0.030 Ohm, 6 A, 2.7 V drive STripFET(TM) II Power MOSFET in SO-8 package

$ 0.286

EOL

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Distributor		SKU		Min	Pkg
Newark		STS6NF20V	2,130	1	Cut Tape	1.050	0.694	0.486	0.367	0.367
Verical	2	STS6NF20V	10,000	2500						0.150
Arrow Electronics	2	STS6NF20V	10,000	2500						0.150
TME	2	STS6NF20V	2,397	1		0.340	0.324	0.295	0.281	0.281	23h
DigiKey	3	497-12679-1-ND	4,758	1	Cut Tape	1.020	0.636	0.414	0.288	0.288

数据表和文档

下载 STMicroelectronics STS6NF20V 的数据表和制造商文档。

Future Electronics

Datasheet12 页14 年前

element14 APAC

Farnell

Newark

TME

库存历史记录

3 个月趋势:

-11.81%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusEOL (Last Updated: 2 months ago)

LTB Date2026-08-07

LTD Date2027-02-07

描述

由其分销商提供的 STMicroelectronics STS6NF20V 的描述。

N-channel 20 V, 0.030 Ohm, 6 A, 2.7 V drive STripFET(TM) II Power MOSFET in SO-8 package

STMicroelectronics

STS6NF20V N-CHANNEL MOSFET TRANSISTOR, 6 A, 20 V, 8-PIN SOIC

RS (Formerly Allied Electronics)

N Channel 20 V 40 mOhm SMT StripFET II Power MOSFET - SOIC-8

Future Electronics

Power MOSFET, N Channel, 20 V, 6 A, 0.045 ohm, SOIC, Surface Mount

Avnet

Trans MOSFET N-CH 20V 6A 8-Pin SO N T/R / MOSFET N-CH 20V 6A 8SOIC

Win Source

MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Fall Time tf: 10ns; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 40mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 24A; Rise Time: 33ns; Voltage Vds Typ: 20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: 2.7V

Farnell

Mosfet, N, So-8; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:6A; Tensión Drenaje-Fuente Vds:20V; Resistencia De Activación Rds(On):45Mohm; Tensión Vgs De Medición Rds(On):2.7V; Tensión Umbral Vgs:600Mv |Stmicroelectronics STS6NF20V

Newark