Infineon IRF7301PBF

Transistor: 2xN-MOSFET; unipolar; 20V; 5.2A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8

Dual N-Channel 20 V 0.05 Ohm 20 nC HEXFET® Power Mosfet - SOIC-8

HEXFET POWER MOSFET Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:5.2A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.2A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:17A; Row Pitch:6.3mm; SMD Marking:F7301; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V