onsemi FDI33N25TU
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
onsemiFQI32N20CTU
Power Field-Effect Transistor, 28A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi FDI33N25TU 的描述。
MOSFET N-CH 250V 33A I2PAK / N-Channel 250 V 33A (Tc) 235W (Tc) Through Hole I2PAK (TO-262)
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 250V 33A I2PAK
N-CHANNEL POWER MOSFET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)33 A
Current Rating33 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance94 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.135 nF
Max Operating Temperature150 °C
Max Power Dissipation235 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation235 W
Rds On Max94 mΩ
Rise Time230 ns
Turn-Off Delay Time75 ns
Voltage Rating (DC)250 V