相关零件
onsemiIRLI610ATU
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 3.3A Tc 3.1W Ta 33W Tc 200V -55C~150C TJ
描述
由其分销商提供的 onsemi FQI4N25TU 的描述。
MOSFET N-CH 250V 3.6A I2PAK
Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
N-CHANNEL POWER MOSFET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)3.6 A
Current Rating3.6 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.75 Ω
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance200 pF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max1.75 Ω
Rise Time45 ns
Turn-Off Delay Time6.4 ns
Voltage Rating (DC)250 V