供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusEOL (Last Updated: 23 hours ago)
LTB Date2025-04-18
LTD Date2025-10-18
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 23 hours ago)
描述
由其分销商提供的 onsemi FDG6303N 的描述。
Transistor MOSFET Negative Channel 25 Volt 0.5A 6-Pin SC-70 T/R
MOSFET Array, Dual N Channel, 25 V, 500 mA, 450 MilliOhms, SC-88 (SOT-363), 6 Pins
DUAL N-CHANNEL, DIGITAL FET Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:25V; Current, Id Cont:0.5A; On State Resistance:0.34ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.8V; Case Style:SC-70; Termination Type:SMD; Transistor Case Style:SC-70
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating500 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationDual
Fall Time8.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance50 pF
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time8.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage800 mV
Turn-Off Delay Time17 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)25 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm