onsemi FDG6321C

Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-88 T/R

Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

DUAL N/P CHANNEL MOSFET, 25V, SC-70; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 500mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 25V; Voltage Vgs Max: 800mV; Voltage Vgs Rds on Measurement: 4.5V

Dual N/P Channel Mosfet, 25V, Sc-70; Transistor, Polaridad:Canal N Y P; Intensidad Drenador Continua Id:500Ma; Tensión Drenaje-Fuente Vds:25V; Resistencia De Activación Rds(On):450Mohm; Tensión Vgs De Medición Rds(On):4.5V |Onsemi FDG6321C

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.