onsemi FDY4000CZ

Complementary N & P-Channel PowerTrench® MOSFET 20V

Trans MOSFET N/P-CH 20V 0.6A/0.35A 6-Pin SOT-563F T/R

Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Trench Mosfet FET

SC89-6, COMP,NCH & PCH POWER TRENCH MOSFET

MOSFET N/P-CH 20V 600/350 SC89-6

Sc89-6 Comp N&P Ch Er T Rohs Compliant: Yes

TRANS DUAL NPFET 20V 0.3A LF SC89-6

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced PowerTrench® process to optimize the RDS(ON) at VGS=2.5V and specify the RDS(ON) at VGS = 1.8V.

MOSFET, DUAL, NP, SC89-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):700mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:600mV; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:100pF; Cont Current Id N Channel:0.6A; Cont Current Id P Channel:350mA; Current Id Max:600mA; On State Resistance Channel 1:700mohm; On State Resistance P Channel 2:1.2ohm; Package / Case:SC-89; Pin Configuration:S2(4),G2(5),D1(6),D2(3),G1(2), S1(1); Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Pulse Current Idm:1A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:1V