onsemi FDG6301N-F085

Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount SC-70-6
Obsolete
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
Newark
2
FDG6301N_F08503KTape & Reel
Farnell
2
FDG6301N-F08505Cut Tape
3h
Win SourceWS-FDG6301N_F085119,960250
4h
Worldway Electronics
2
FDG6301N_F08526,4257
8h
AztechFDG6301N-F08510,362
2d

数据表和文档

下载 onsemi FDG6301N-F085 的数据表和制造商文档。

Future Electronics

Datasheet5 页10 年前

onsemi

IHS

Upverter

Fairchild Semiconductor

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符号封装
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封装
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备用零件

此零件
备用零件
onsemiFDG6301N-F085
onsemiFDG6301N
Price @ 1000
$ 0.158
Stock
653,588
1,671,564
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
SC
SC
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
220 mA
220 mA
Threshold Voltage
850 mV
850 mV
Rds On Max
4 Ω
4 Ω
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
300 mW
300 mW
Input Capacitance
9.5 pF
9.5 pF

供应链

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2008-10-29
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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描述

由其分销商提供的 onsemi FDG6301N-F085 的描述。

Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount SC-70-6
Future Electronics
Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω
onsemi
N-Channel Power Mosfet/Tape Reel |Onsemi FDG6301N_F085
Newark
MOSFET, DUAL N-CH, 25V, 0.22A, 150DEG C
element14 APAC
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
FDG6301N_F085 Fairchild/ON Semiconductor
YIC International
MOSFET, DUAL N-CH, 25V, 0.22A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 2.6ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage
Farnell
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Fairchild Semiconductor

图片

RS
Augswan
Farnell

制造商别名

onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

零件编号别名

该零件可能有以下备用零件编号：

  • FDG6301NF085
  • FDG6301N_F085