onsemi FDG6320C

Name: onsemi FDG6320C
Brand: onsemi
SKU: FDG6320C

Trans Mosfet N/p-ch 25V 0.22A/0.14A 6-PIN SC-88 T/r

$ 1.376

EOL

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet		FDG6320C	1,029,000	477				1.376	1.313	1d
Flip Electronics		FDG6320C	343,000							>1wk
element14 APAC	2	FDG6320C	0	5	Cut Tape	0.266*	0.236*	0.175*	0.165*	13h
Farnell	3	FDG6320C	0	5	Cut Tape	0.469*	0.351*	0.274*	0.274*	10h
Win Source		WS-FDG6320C	3,000	10		5.536	4.286	4.286	4.286	38m

数据表和文档

下载 onsemi FDG6320C 的数据表和制造商文档。

IHS

Datasheet11 页5 年前

Datasheet9 页0 年前

Future Electronics

Upverter

element14 APAC

onsemi

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-11-01

Lifecycle StatusEOL (Last Updated: 6 days ago)

LTB Date2022-01-31

LTD Date2023-01-31

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)

描述

由其分销商提供的 onsemi FDG6320C 的描述。

Trans MOSFET N/P-CH 25V 0.22A/0.14A 6-Pin SC-88 T/R

UnikeyIC

Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, DUAL, NP, SMD, 6-SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:220mA; Package / Case:SC-70; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Fairchild Semiconductor