onsemi FCP850N80Z

Name: onsemi FCP850N80Z
Brand: onsemi
SKU: FCP850N80Z

N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220

$ 1.35

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Distributor	SKU		Min	Pkg
Arrow Electronics	FCP850N80Z	4	1		0.637	0.637	0.637	0.637	0.637
Rochester Electronics	FCP850N80Z	100					1.230	1.100	1.030	22h
DigiKey	FCP850N80Z-ND	571	1	Tube	3.720	2.437	1.705	1.323	1.229
Newark	FCP850N80Z	0	1		4.080	2.840	2.130	1.830	1.830
Onlinecomponents.com	FCP850N80Z	0	200	Bulk				1.350	1.350

数据表和文档

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Master Electronics

Datasheet0 页0 年前

IHS

onsemi

Farnell

Newark

库存历史记录

3 个月趋势:

-60.10%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FCP850N80Z 的描述。

N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220

onsemi

MOSFET N-CH 800V 8A TO220-3 / N-Channel 800 V 8A (Tc) 136W (Tc) Through Hole TO-220-3

Win Source

Mosfet, N-Ch, 800V, 8A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.71Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Onsemi FCP850N80Z

Newark

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.

Fairchild Semiconductor