STMicroelectronics STP10N62K3

Name: STMicroelectronics STP10N62K3
Brand: STMicroelectronics
SKU: STP10N62K3

N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package

Obsolete

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Distributor	SKU		Min	Pkg
Farnell	STP10N62K3	0	1		1.621*	1.621*	1.280*	1.091*	0.989*	1d
element14 APAC	STP10N62K3	0	1		2.496*	1.588*	1.248*	0.956*	0.932*	16h
Win Source	WS-STP10N62K3	9,000	25				1.877	1.574	1.574	4h
Worldway Electronics	STP10N62K3	10,245	7	Tube		0.891	0.864	0.818	0.818	2h
Esaler Electronic	STP10N62K3	1			3.710	3.673	3.637	3.601	3.565	3h

数据表和文档

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IHS

Datasheet17 页14 年前

element14 APAC

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-06-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-01-29

LTD Date2014-07-29

描述

由其分销商提供的 STMicroelectronics STP10N62K3 的描述。

N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package

STMicroelectronics

Trans MOSFET N-CH 620V 8.4A 3-Pin(3+Tab) TO-220 Tube

Avnet

8.4 A 620 V 0.75 ohm N-CHANNEL Si POWER MOSFET TO-220AB

Component Stockers USA

Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N CH, 620V, 8.4A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; MSL:- ;RoHS Compliant: Yes

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