供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-07
Lifecycle StatusProduction (Last Updated: 9 months ago)
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描述
由其分销商提供的 STMicroelectronics STW38N65M5 的描述。
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-247 package
N-Channel 710 V 190 W 0.095 Ohm Flange Mount Mdmesh V Mosfet - TO-247
STW38N65M5 N-CHANNEL MOSFET TRANSISTOR, 30 A, 710 V, 3-PIN TO-247
Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
STMicroelectronics NChannel EnhancedMOSTube MDmesh M5series, Vds=710 V, 30 A, TO-247encapsulation, Through hole mounting, 3Pin
MOSFET, N-CH, 650V, 30A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vds)650 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max95 mΩ
Resistance95 mΩ
Rise Time9 ns
Turn-Off Delay Time66 ns
Turn-On Delay Time66 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm