onsemi FCD5N60TM

Name: onsemi FCD5N60TM
Brand: onsemi
SKU: FCD5N60TM

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK

$ 0.881

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Distributor		SKU		Min	Pkg
Newark	2	FCD5N60TM	3,710	1	Cut Tape	2.780	1.800	1.360	1.140	1.140
Verical	2	FCD5N60TM	164	8			0.849	0.811	0.811	0.811
Arrow Electronics		FCD5N60TM	164	1		0.928	0.849	0.811	0.811	0.811
Rochester Electronics		FCD5N60TM	1,320					1.010	0.838	0.747	10h
DigiKey	3	FCD5N60TMCT-ND	4,119	1	Cut Tape	2.750	1.774	1.215	0.909	0.909

数据表和文档

下载 onsemi FCD5N60TM 的数据表和制造商文档。

IHS

Datasheet6 页11 年前

Newark

Upverter

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

+124%

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-07-11

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FCD5N60TM 的描述。

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK

onsemi

N-Channel 600 V 0.95 Ohm Surface Mount SuperFET Mosfet - TO-252-3

Future Electronics

Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 4.6A DPAK

Win Source

MOSFET, N, 650V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:4.6A; Package / Case:DPAK; Power Dissipation Pd:54W; Power Dissipation Pd:54W; Pulse Current Idm:13.8A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor