onsemi FCA35N60

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-3P

Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-3P(N) Rail

600V 35A 312.5W 98m´Î@10V17.5A 5V@250Ã×A N Channel TO-3PN MOSFETs ROHS

Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

312.5W(Tc) 30V 5V@ 250¦ÌA 181nC@ 10 V 1N 600V 98m¦¸@ 17.5A,10V 35A 6.64nF@25V TO-3PN 16.2mm*5mm*20.1mm

MOSFET, N CH, 600V, 35A, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PN; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.