备用零件
Price @ 1000
$ 0.135
$ 0.156
Stock
351,818
401,211
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
1 A
1 A
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
25
25
Power Dissipation
830 mW
830 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2005-09-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiKSD1616AYTA
TRANS NPN 60V 1A TO92-3 / Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
描述
由其分销商提供的 onsemi BC63916-D74Z 的描述。
Transistor General Purpose BJT NPN 80 Volt 1 Amp 3-Pin TO-92 Ammo
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bjt (Bipolar Junction Transistor) Rohs Compliant: Yes
80V 830mW 1A 100@150mA2V 100MHz 500mV@500mA50mA NPN -55¡Í~+150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight55 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation830 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)80 V
Dimensions
Height8.77 mm
Length5.2 mm
Width4.19 mm