供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2000-12-04
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-01-06
LTD Date2026-07-06
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
相关零件
onsemiKSD1616AGTA
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
onsemiKSD1616ALTA
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
onsemiKSD1616GTA
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
描述
由其分销商提供的 onsemi KSD1616AYTA 的描述。
TRANS NPN 60V 1A TO92-3 / Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSD1616AYTA Series 60 V 1 A NPN Epitaxial Silicon Transistor - TO-92-3
Bipolar Transistors - BJT NPN Epitaxial Transistor
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold
60V 750mW 1A 135@100mA2V 160MHz 150mV@1A50mA NPN +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 60V, 1A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 160MHz; Power Dissipation Pd: 750mW; DC Collector Current: 1; Available until stocks are exhausted
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency160 MHz
Gain Bandwidth Product160 MHz
hFE Min135
Max Breakdown Voltage60 V
Max Collector Current1 A
Max Frequency1 MHz
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation750 mW
Schedule B8541210080
Transition Frequency160 MHz
Voltage Rating (DC)60 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm