备用零件
Price @ 1000
$ 0.651
$ 0.651
Stock
84,117
192,810
192,810
Authorized Distributors
1
5
5
Mount
Through Hole
-
-
Case/Package
TO-92
TO-92-3
TO-92-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
65 V
65 V
65 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
150 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
600 mV
hFE Min
200
200
200
Power Dissipation
625 mW
625 mW
625 mW
供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1977-01-14
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2007-12-31
LTD Date2008-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
相关零件
onsemiFJN3304RBU
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
描述
由其分销商提供的 onsemi BC546B 的描述。
Bulk Through Hole Single 1 Bipolar (BJT) Transistor 100mA 500mW 300MHz 80V
BC546B NPN Epitaxial Silicon Transistor 80V 100mA TO-92
NPN SILICON AMPLIFIER TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 65V 0.1A 3-Pin TO-92 Bulk
TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 100mA; DC Current Gain hFE: 150hFE; Transistor Case
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight200 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)65 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min200
Max Collector Current100 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Transition Frequency150 MHz
Voltage Rating (DC)65 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm