备用零件
此零件
备用零件
Price @ 1000
$ 0.027
$ 0.059
Stock
139,737
756,278
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
65 V
65 V
Max Collector Current
100 mA
100 mA
Transition Frequency
300 MHz
300 MHz
Collector Emitter Saturation Voltage
250 mV
250 mV
hFE Min
110
110
Power Dissipation
500 mW
500 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2002-07-26
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2022-01-08
LTD Date2022-07-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
相关零件
onsemiFJN3304RBU
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
描述
由其分销商提供的 onsemi BC546ATA 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Fan-Fold
Bipolar Transistors - BJT NPN 65V 100mA HFE/220
65V 500mW 100mA 110@2mA5V 300MHz 250mV@100mA5mA NPN +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 65V, TO-92-3
TRANSISTOR, BIPOL, NPN, 65V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 500mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE; T
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)65 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min110
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation500 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)65 V
Dimensions
Height8.77 mm
Length4.58 mm
Width3.86 mm