备用零件
Price @ 1000
$ 0.073
$ 0.062
$ 0.062
Stock
961,532
1,048,341
1,048,341
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92
TO-92
TO-92
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-45 V
-45 V
-45 V
Max Collector Current
800 mA
800 mA
800 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
-700 mV
-700 mV
-700 mV
hFE Min
100
100
100
Power Dissipation
625 mW
1.5 W
1.5 W
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi BC32725TA 的描述。
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors (BJT); BC32725TA; ON SEMICONDUCTOR; PNP; 45 V; 800 mA; 3
BC327 Series 45 V 800 mA Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
45V 625mW 160@100mA,1V 800mA PNP TO-92 Bipolar Transistors - BJT ROHS
General Purpose Transistors PNP Ic=800mA Vceo=45V hfe=160 P=625mW TO92-3L
Trans GP BJT PNP 45V 0.8A 625mW 3-Pin TO-92 Fan-Fold
Bipolar Transistors PNP -45V -800mA HFE/400
BIPOLAR TRANSISTOR; Transistor Polarity:; BIPOLAR TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:-800mA; DC Current Gain hFE:400; Operating Temperature Max:150°C
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240.007063 mg
Technical
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage-45 V
Collector Emitter Saturation Voltage-700 mV
Collector Emitter Voltage (VCEO)45 V
Current500 mA
Current Rating-800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Breakdown Voltage45 V
Max Collector Current800 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)-50 V
Dimensions
Height8.77 mm
Length5.2 mm
Width4.19 mm