备用零件
Price @ 1000
$ 0.08
$ 0.079
Stock
449,993
1,343,861
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
-45 V
-45 V
Max Collector Current
800 mA
800 mA
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
-700 mV
-700 mV
hFE Min
170
170
Power Dissipation
625 mW
625 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiKSB1116SYBU
Bulk Through Hole PNP KSB1116 Bipolar (BJT) Transistor 135 @ 100mA 2V 1A 750mW 120MHz
描述
由其分销商提供的 onsemi BC32740BU 的描述。
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 625 mW, -800 mA, 170
PNP EPITAXIAL SILICON TRANSISTOR Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
PNP 625 mW 50 V 800 mA Through Hole Epitaxial Silicon Transistor - TO-92
Bipolar Transistors - BJT TO-92 PNP GP AMP
Trans GP BJT PNP 45V 0.8A 625mW 3-Pin TO-92 Bag
General Purpose Transistor, TO-92, PNP, 45V
TRANSISTOR PNP 45V 800MA TO-92
45V 625mW 800mA 250@100mA1V 100MHz PNP 700mV@500mA50mA +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, PNP, -45V, TO-92-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: -800mA; DC Current Gain hFE: 170hFE
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight179 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage-45 V
Collector Emitter Saturation Voltage-700 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating-800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min170
Max Breakdown Voltage60 V
Max Collector Current800 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)-45 V
Dimensions
Height5.33 mm
Length4.58 mm
Width3.86 mm