备用零件
Price @ 1000
$ 0.155
$ 0.128
$ 0.128
Stock
3,866,610
6,833,119
6,833,119
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SC
SOT-363
SOT-363
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
115 mA
115 mA
115 mA
Threshold Voltage
1.76 V
2 V
2 V
Rds On Max
7.5 Ω
7.5 Ω
7.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 mW
310 mW
310 mW
Input Capacitance
50 pF
50 pF
50 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2007-10-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonBSR606NH6327XTSA1
MOSFET N-CH 60V 2.3A SC59 N-Channel 60 V 2.3A (Ta) 500mW (Ta) Surface Mount PG-SC59-3
VishaySI1926DL-T1-E3
Si1926DL Series Dual N Channel 60 V 1.4 Ohm Surface Mount Power Mosfet - SOT-363
InfineonBSR92PH6327XTSA1
250V 140mA 500mW 11Ω@10V,140mA 1V@130uA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
描述
由其分销商提供的 onsemi 2N7002DW 的描述。
N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 2Ω
Transistor MOSFET Array Dual N-CH 60V 0.115A 6-Pin SOT-363 T/R
Avnet Japan
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-363
MOSFET, DUAL N CH, 60V, 115MA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:5V; Thresho
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 200
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)115 mA
Drain to Source Breakdown Voltage78 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs1.76 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation200 mW
Rds On Max7.5 Ω
Resistance7.5 Ω
Schedule B8541210080
Threshold Voltage1.76 V
Turn-Off Delay Time12.5 ns
Turn-On Delay Time5.85 ns
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm