供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2004-02-10
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2013-12-31
LTD Date2014-06-30
描述
由其分销商提供的 NXP Semiconductors PMF780SN,115 的描述。
560mW(Tc) 20V 2V@ 250¦ÌA 1.05nC@ 10 V 1N 60V 920m¦¸@ 300mA,10V 23pF@30V SC-70 1mm
Trans MOSFET N-CH 60V 0.57A 3-Pin SC-70 T/R
570 mA 60 V N-CHANNEL Si SMALL SIGNAL MOSFET
Small Signal Field-Effect Transistor, 0.57A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 60V 570MA SOT323-3
N-channel TrenchMOS standard level FET
制造商别名
NXP Semiconductors 在全球拥有多个品牌，分销商可将其用作替代名称。NXP Semiconductors 也可称为以下名称：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技术规格
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)570 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance920 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance23 pF
Max Operating Temperature150 °C
Max Power Dissipation560 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation560 mW
Rds On Max920 mΩ
Resistance920 MΩ
Rise Time4 ns
Turn-Off Delay Time5 ns
Turn-On Delay Time2 ns