NXP Semiconductors BSH112,235

Name: NXP Semiconductors BSH112,235
Brand: NXP Semiconductors
SKU: BSH112,235

Trans Mosfet N-ch 60V 0.3A 3-PIN TO-236AB T/r

$ 0.041

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	BSH112,235	4,000					0.050	0.041	0.037	11h
Win Source	WS-BSH112,235	197,040	575					0.087	0.058	12h
Worldway Electronics	BSH112,235	11,845	7	Tape & Reel		0.014	0.014	0.013	0.013	11h
GreenTree Electronics	BSH112235	579,688								9h
Aztech	BSH112,235	2,512			0.030	0.030	0.030	0.030	0.030	6h

数据表和文档

下载 NXP Semiconductors BSH112,235 的数据表和制造商文档。

IHS

Datasheet14 页29 年前

Datasheet13 页29 年前

Nexperia

库存历史记录

3 个月趋势:

+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-11-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 NXP Semiconductors BSH112,235 的描述。

Trans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R

Avnet

MOSFET N-CH 60V 300MA 830mW SOT-23-3 Pb-Free

ACDS

300 mA 60 V N-CHANNEL Si SMALL SIGNAL MOSFET TO-236AB

Component Stockers USA

Compliant Surface Mount Lead Free Cut Tape No SVHC 5 Ω 2 V SMD/SMT

Augswan

Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

IHS

N-channel TrenchMOS intermediate level FET

Nexperia

MOSFET, N CH, 60V, 300MA, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:830mW; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:300mA; Package / Case:SOT-23; Power Dissipation Pd:830mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:75V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V

element14 APAC