备用零件
Price @ 1000
$ 0.077
$ 0.061
$ 0.061
Stock
50,515,136
3,745,531
3,745,531
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
50 V
50 V
50 V
Continuous Drain Current (ID)
220 mA
200 mA
200 mA
Threshold Voltage
1.3 V
1.25 V
1.25 V
Rds On Max
3.5 Ω
3.5 Ω
3.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
360 mW
225 mW
225 mW
Input Capacitance
27 pF
50 pF
50 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonBSS138NH6327XTSA2
Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount
描述
由其分销商提供的 onsemi BSS138 的描述。
Trans MOSFET N Channel 50 Volt 0.22A 3-Pin SOT-23 Tape and Reel
N-Channel MOSFET, Logic Level Enhancement Mode, 50V, 220mA
Power MOSFET, N Channel, 50 V, 300 mA, 2.5 ohm, SOT-23, Surface Mount
N-Channel Logic Level Enhancement Mode Field Effect Transistor Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V High density cell design for extremely low RDS(ON). Rugged and Relaible. Compact industry standard SOT-23 surface mount package.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)220 mA
Current Rating220 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)50 V
Dual Supply Voltage50 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance27 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs1.3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation360 mW
Rds On Max3.5 Ω
Resistance6 Ω
Rise Time9 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1.3 V
Turn-Off Delay Time20 ns
Turn-On Delay Time2.5 ns
Voltage Rating (DC)50 V
Dimensions
Height1.11 mm
Length2.92 mm