价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BSS123LT1G | 1,554,000 | 3K | 3h | ||||||||
| Newark | BSS123LT1G | 108,601 | 1 | Cut Tape | ||||||||
| Arrow Electronics | BSS123LT1G | 8,197 | 1 | |||||||||
| Verical | BSS123LT1G | 1,593,000 | 3K | |||||||||
| Future Electronics | BSS123LT1G | 2,112,000 | 3K | Tape & Reel |
备用零件
Price @ 1000
$ 0.072
$ 0.097
$ 0.097
Stock
82,636,256
48,324,973
48,324,973
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
170 mA
170 mA
170 mA
Threshold Voltage
800 mV
1.7 V
1.7 V
Rds On Max
6 Ω
6 Ω
6 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
225 mW
360 mW
360 mW
Input Capacitance
20 pF
73 pF
73 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1991-09-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonBSS123NH6327XTSA1
Power MOSFET, N Channel, 100 V, 190 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount
InfineonBSS84PH6327XTSA2
MOSFET P-CH 60V 0.17A SOT23 / Trans MOSFET P-CH 60V 0.17A Automotive 3-Pin SOT-23 T/R
描述
由其分销商提供的 onsemi BSS123LT1G 的描述。
Transistor: N-MOSFET; unipolar; 100V; 0.17A; 6ohm; 225mW; -55+150 deg.C; SMD; SOT23; AEC-Q100
BSS123L: Small Signal MOSFET 100V 170mA 6 Ohm Single N-Channel SOT-23
Power MOSFET 170 mA, 100 V, N-Channel SOT-23
MOSFET, POWER; N-CH; VDSS 100VDC; 5 OHMS; 0.17A; SOT-23; PD 225MW; 3K REEL
ON Semiconductor BSS123LT1G MOSFET N-channel SOT-23 Tape Full reel
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N CH, 100V, 170MA, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10VDC; Threshold Voltage Vgs: 800m
N Channel, Mosfet, 100V, 170Ma, Sot-23; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:170Ma; Tensión Drenaje-Fuente Vds:100V; Resistencia De Activación Rds(On):6Ohm; Tensión Vgs De Medición Rds(On):10Vdc |Onsemi BSS123LT1G
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)170 mA
Current Rating170 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance20 pF
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs20 V
Number of Elements1
PackagingTape and Reel
Power Dissipation225 mW
Rds On Max6 Ω
Resistance6 Ω
Schedule B8541210080
Threshold Voltage800 mV
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)100 V
Dimensions
Height1.01 mm
Length3.04 mm