供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 8 months ago)
描述
由其分销商提供的 Nexperia BCX56 的描述。
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) SOT-89
TRANSISTOR, NPN, 1A, 80V, SOT89
500mV@ 50mA,500mA NPN 1.25W 5V 100nA 100V 80V 1A SOT-89
1000 mA 80 V NPN Si SMALL SIGNAL TRANSISTOR TO-243
TRANSISTOR, NPN, SOT-89; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:80V; Current Ic Continuous a Max:1000mA; Voltage, Vce Sat Max:500mV; Power Dissipation:0.5W; Min Hfe:63; ft, ;RoHS Compliant: Yes
TRANSISTOR, NPN SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 180MHz; Power Dissipation Pd: 1.35W; DC Collector Current: 1A; DC Current Gain hFE: 63hFE; Transistor Case Sty
TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:180MHz; Hfe Min:63; No. of Transistors:1; Package / Case:SOT-89; Power Dissipation Pd:500mW; Power Dissipation Ptot Max:500mW; SMD Marking:BH; Termination Type:SMD; Voltage Vcbo:100V
制造商别名
Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
技术规格
Physical
Case/PackageSOT-89
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency180 MHz
Gain Bandwidth Product180 MHz
hFE Min25
Max Collector Current1 A
Max Input Voltage200 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.35 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation500 mW
TerminationSMD/SMT
Transition Frequency130 MHz
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm