Diodes Inc. BCX5616TA

Name: Diodes Inc. BCX5616TA
Brand: Diodes Inc.
SKU: BCX5616TA

Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 1 W, SOT-89, Surface Mount

$ 0.095

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU	Min	Pkg
TME	2	BCX5616TA	1		0.350	0.222	0.139	0.091	0.065	21h
Newark	2	BCX5616TA	1	Cut Tape	0.502	0.312	0.194	0.144	0.144
RS (Formerly Allied Electronics)		BCX5616TA	50	Bulk			0.330	0.290	0.290	14h
Avnet		BCX5616TA	1K					0.049	0.048	5d
Future Electronics	2	BCX5616TA	1K	Tape & Reel				0.077	0.072

数据表和文档

下载 Diodes Inc. BCX5616TA 的数据表和制造商文档。

Newark

Datasheet7 页4 年前

Datasheet7 页10 年前

Datasheet1 页19 年前

Future Electronics

RS (Formerly Allied Electronics)

Diodes Inc SCT

iiiC

库存历史记录

3 个月趋势:

-100%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1993-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Diodes Inc. BCX5616TA 的描述。

Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 1 W, SOT-89, Surface Mount

Avnet Silica

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Semicontronic

80V 1W 100@150mA,2V 1A NPN SOT-89 Bipolar Transistors - BJT ROHS

Dasenic

Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS NPN 80V 1A SOT-89

Win Source

BCP5616 Series NPN 1 A 80 V SMT Silicon Medium Power Transistor - SOT-89

Future Electronics

General Purpose Transistors NPN Ic=1A Vceo=80V hfe=100~250 P=2W SOT89-3

HQonline

DIODES INC. - BCX5616TA - TRANSISTOR, NPN, 80V, SOT-89

Jak Electronics

TRANSISTOR, NPN, 80V, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Hfe Min:100; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:SMD; Voltage Vcbo:100V

element14 APAC