备用零件
Price @ 1000
$ 0.098
$ 0.157
Stock
844,051
157,074
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
SOT-89
SOT
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
1 A
1 A
Transition Frequency
150 MHz
100 MHz
Collector Emitter Saturation Voltage
500 mV
-
hFE Min
63
63
Power Dissipation
1 W
-
描述
由其分销商提供的 Diodes Inc. BCX5610TA 的描述。
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS NPN 80V 1A SOT89
BCX56 Series 80 V 1 A NPN Silicon Planar Medium Power Transistor - SOT-89-3
General Purpose Transistors NPN Ic=1A Vceo=80V hfe=63~160 P=1W SOT89-3
Trans, Npn, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCX5610TA
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min63
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation1 W
Schedule B8541290080
Transition Frequency150 MHz
Dimensions
Height1.5 mm
Length4.6 mm
Width2.6 mm