Infineon SPB20N60S5ATMA1

Name: Infineon SPB20N60S5ATMA1
Brand: Infineon
SKU: SPB20N60S5ATMA1

Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R

$ 2.02

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		SPB20N60S5ATMA1	3,000	1K					3.032	2.709
Avnet		SPB20N60S5ATMA1	0	1K					1.877	1.793	3d
Farnell	2	SPB20N60S5ATMA1	0	1	Cut Tape	4.670*	3.871*	3.465*	2.829*	2.829*	18h
Mouser		726-SPB20N60S5	1,553	1	Tape & Reel	4.860	3.230	2.560	2.020	2.020
Verical		SPB20N60S5ATMA1	3,000	1K					3.103	3.103

数据表和文档

下载 Infineon SPB20N60S5ATMA1 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Farnell

库存历史记录

3 个月趋势:

-0.95%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-01-01

Lifecycle StatusNRND (Last Updated: 4 months ago)

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描述

由其分销商提供的 Infineon SPB20N60S5ATMA1 的描述。

Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R

Verical

Mosfet, N Channel, 600V, 20A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: Yes

Newark

Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance

Infineon