价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STB28NM60ND | 1,000 | 1K | Tape & Reel | ||||||||
| Arrow Electronics | STB28NM60ND | 1,554 | 1 | |||||||||
| Verical | STB28NM60ND | 1,554 | 2 | |||||||||
| DigiKey | 497-14238-1-ND | 1,427 | 1 | Cut Tape | ||||||||
| Avnet | STB28NM60ND | 0 | 1K | 7h |
相关零件
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MOSFET N-CH 600V 28A D2PAK / N-Channel 600 V 28A (Tc) 250W (Tc) Surface Mount D2PAK
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N-channel 600 V, 0.13 Ohm, 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK
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N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package
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VishaySIHB23N60E-GE3
MOSFET N-CH 600V 23A D2PAK / N-Channel 600 V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
描述
由其分销商提供的 STMicroelectronics STB28NM60ND 的描述。
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
Single N-Channel 600 V 0.15 O 190 W Surface Mount Power Mosfet - D2PAK
Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK T/R
190W(Tc) 25V 5V@ 250¦ÌA 62.5nC@ 10 V 1N 600V 150m¦¸@ 11.5A,10V 23A 2.09nF@100V D2PAK
Power Field-Effect Transistor, 23A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.09 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max150 mΩ
Rise Time21.5 ns
Schedule B8541290080
Turn-Off Delay Time92 ns
Turn-On Delay Time23.5 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm