Infineon SPB12N50C3ATMA1

Name: Infineon SPB12N50C3ATMA1
Brand: Infineon
SKU: SPB12N50C3ATMA1

Trans MOSFET N-CH 500V 11.6A 3-Pin(2+Tab) D2PAK T/R

$ 1.1

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Rochester Electronics		SPB12N50C3ATMA1	89					1.320	1.100	0.977	18h
Farnell	3	SPB12N50C3ATMA1	0	1	Cut Tape	3.037*	2.298*	1.841*	1.341*	1.341*	18h
Component Stockers USA		SPB12N50C3	602			99.990	99.990	99.990	99.990	99.990	>1wk
Win Source	2	WS-SPB12N50C3	17,000	40				1.317	1.070	1.070	18h
Worldway Electronics	2	SPB12N50C3ATMA1	13,044	7	Tape & Reel		0.349	0.338	0.321	0.321	17h

数据表和文档

下载 Infineon SPB12N50C3ATMA1 的数据表和制造商文档。

IHS

Datasheet12 页21 年前

Farnell

iiiC

库存历史记录

3 个月趋势:

Restocked

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-08-31

LTD Date2019-02-28

描述

由其分销商提供的 Infineon SPB12N50C3ATMA1 的描述。

Trans MOSFET N-CH 500V 11.6A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:11.6A; On State Resistance:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes

Newark

Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Infineon