Infineon IRLZ44ZPBF

Name: Infineon IRLZ44ZPBF
Brand: Infineon
SKU: IRLZ44ZPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 11 Milliohms; Id 51A; TO-220AB; Pd 80W; Vgs +/-1

$ 0.901

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRLZ44ZPBF	23,792					0.642	0.533	0.475	19h
RS (Formerly Allied Electronics)		IRLZ44ZPBF	0	5	Bulk		1.410	1.270	1.270	1.270	11h
Farnell	2	IRLZ44ZPBF..	0	1		1.817*	1.817*	0.988*	0.789*	0.789*	4h
Microchip USA	2	IRLZ44ZPBF	2,727	3500	Tube					0.444	11h
Verical		IRLZ44ZPBF	23,600	468					0.666	0.594

数据表和文档

下载 Infineon IRLZ44ZPBF 的数据表和制造商文档。

IHS

Datasheet13 页15 年前

Datasheet13 页22 年前

Farnell

Future Electronics

Newark

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-1.75%

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InfineonIRLZ44ZPBF

InfineonAUIRLZ44Z

Price @ 1000

$ 0.901

$ 0.653

Stock

296,780

279,803

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

51 A

Threshold Voltage

3 V

1 V

Rds On Max

13.5 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

80 W

Input Capacitance

1.62 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-02

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

描述

由其分销商提供的 Infineon IRLZ44ZPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 51A;TO-220AB;PD 80W;VGS +/-1

RS (Formerly Allied Electronics)

Single N-Channel 55 V 13.5 mOhm 24 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 51A 3-Pin(3+Tab) TO-220AB Tube

Verical

HEXFET Power MOSFET Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:51A; On Resistance, Rds(on):13.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon