Infineon IRFZ46NPBF

Name: Infineon IRFZ46NPBF
Brand: Infineon
SKU: IRFZ46NPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de

$ 0.369

NRND

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	63J7145	35	1		1.560	0.981	0.634	0.440	0.440	2h
Newark		IRFZ46NPBF	35	1		0.179	0.179	0.179	0.179	0.179
Rochester Electronics		IRFZ46NPBF	20,682					0.467	0.388	0.346	1d
RS (Formerly Allied Electronics)		IRFZ46NPBF	549	1	Bulk	0.180	0.180	0.180	0.180	0.180	13h
Arrow Electronics	2	IRFZ46NPBF	4,900	1		0.459	0.419	0.371	0.325	0.320

数据表和文档

下载 Infineon IRFZ46NPBF 的数据表和制造商文档。

Newark

Datasheet9 页15 年前

Datasheet8 页15 年前

IHS

element14 APAC

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+59.03%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1995-08-01

Lifecycle StatusNRND (Last Updated: 4 months ago)

LTB Date2012-06-01

LTD Date2012-09-01

描述

由其分销商提供的 Infineon IRFZ46NPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 55 V, 46 A, 0.0165 ohm, TO-220AB, Through Hole

Avnet

Transistor IRFZ46N MOSFET N-Channel 55V 28A TO-220

Jameco

Sensible Micro

Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 107 W

Distrelec

Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

N Channel Mosfet, 55V, 53A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:53A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ46NPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 55V, 46A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:46A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:88W; Power, Pd:88W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V

Farnell