相关零件
InfineonAUIRFZ46NL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
描述
由其分销商提供的 Infineon IRLZ44NLPBF 的描述。
MOSFET, 55V, 47A, 22 MOHM, 32 NC QG, LOGIC LEVEL, TO-262
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:47A; On Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)47 A
Current Rating47 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
PackagingBulk
Power Dissipation3.8 W
Rds On Max22 mΩ
Rise Time84 ns
Voltage Rating (DC)55 V