价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRLS3034TRL7PP | 700 | 1 | |||||||||
| Rochester Electronics | IRLS3034TRL7PP | 712,029 | 22h | |||||||||
| Farnell | IRLS3034TRL7PP | 352 | 1 | Cut Tape | 22h | |||||||
| Mouser | 942-IRLS3034TRL7PP | 2 | 1 | Tape & Reel | ||||||||
| Microchip USA | IRLS3034TRL7PP | 2,114 | 600 | 16h |
备用零件
Price @ 1000
$ 2.114
$ 11.72
Stock
2,250,696
292,470
Authorized Distributors
4
2
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-7
D2PAK
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
-
2.5 V
Rds On Max
1.4 mΩ
1.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
380 W
380 W
Input Capacitance
10.99 nF
10.99 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-01-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonAUIRFS3004-7P
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS
STMicroelectronicsSTH320N4F6-6
In a Pack of 5, N-Channel MOSFET, 200 A, 40 V, 8-Pin H2PAK STMicroelectronics STH320N4F6-6
VishaySQM200N04-1M1L-GE3
SQM200N04-1M1L-GE3 N-CHANNEL MOSFET TRANSISTOR, 200 A, 40 V, 7-PIN TO-263
STMicroelectronicsSTH270N4F3-6
STH270N4F3-6 N-channel MOSFET Transistor, 180 A, 40 V, 8-Pin H2PAK
描述
由其分销商提供的 Infineon IRLS3034TRL7PP 的描述。
MOSFET N-CH 40V 240A D2PAK7 / Trans MOSFET N-CH Si 40V 380A 7-Pin(6+Tab) D2PAK T/R
40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
Single N-Channel 40 V 1.4 mOhm 180 nC HEXFET® Power Mosfet - D2PAK-7
Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
MOSFET, N-CH, 40V, 240A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 240A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.001ohm; ; Available until stocks are exhausted Alternative available
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Superior R*Q at 4.5V VGS; Logic Level; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 380 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 1 / Gate-Source Voltage V = 20 / Fall Time ns = 200 / Rise Time ns = 590 / Turn-OFF Delay Time ns = 94 / Turn-ON Delay Time ns = 71 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 7 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 380
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.4 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time200 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.99 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.4 mΩ
Package Quantity800
PackagingTape & Reel
Power Dissipation380 W
Rds On Max1.4 mΩ
Rise Time590 ns
Schedule B8541290080
Turn-Off Delay Time94 ns
Turn-On Delay Time71 ns
Dimensions
Height5.084 mm